| PART |
Description |
Maker |
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 |
256K X 8 STANDARD SRAM, 12 ns, PDSO44
256K X 8 STANDARD SRAM, 10 ns, PDSO44
TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM
256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM
TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36
TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
|
ETC
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
|
| CY7C1041BNV33L-15VXC CY7C1041BNV33-15VXC CY7C1041B |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 Static RAM 256K × 16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44
256K X 16 UVPROM, 80 ns, CQCC44
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 120 ns, PDIP40
256K X 16 OTPROM, 120 ns, PQCC44
256K X 16 OTPROM, 200 ns, PQCC44
256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90 |
256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| CY7C1006D-10VXI |
1-Mbit (256K x 4) Static RAM 256K X 4 STANDARD SRAM, 10 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
| 29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
| IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T |
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
|
